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  Datasheet File OCR Text:
 Bulletin I0308J 11/01
IR30CDR..L SERIES
HIGH POWER RECTIFIER DIODES
Junction Size: VRRM Class: Passivation Process:
30 mm Diameter 400 to 1000 V Diffused Junction
Major Ratings and Characteristics
Parameters
VFM VRRM Maximum Forward Voltage Reverse Breakdown Voltage Range
Units
1.25 V 400 to 1000 V
Test Conditions
T J = 25C, IF = 1000 A T J = 150C, I RRM = 20 mA
Mechanical Characteristics
Nominal Back Metal Composition Nominal Front Metal Composition Chip Dimensions Recommended Storage Environment Al - Ni - Au Nickel plate Molibdenum disc 30 mm diameter (see drawing) Storage in original container, in dessicated nitrogen, with no contamination
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1
IR30CDR..L Series
Bulletin I0308J 11/01
Ordering Information Table
Device Code
IR
1 1 2 3 4 5 6 7 International Rectifier device Chip Dimension in Millimeters
30
2
C
3
D
4
R
5
10
6
L
7
Device identifier between chip with same diameter Type of Device: D = Standard Recovery Diode Passivation: R = Rubber for all junctions Voltage code: Code x 100 = VRRM Metallization: L = Nickel plate Molibdenum disc (Anode) Al - Ni - Au (Cathode)
Available Class 04 = 400 V 08 = 800 V 10 = 1000 V
Outline Table
24.8 (0.98) DIA. 1.6 / 1.9 (0.06 / 0.07) 1.3 / 1.6 (0.05 / 0.06)
29.7 (1.17) DIA.
All dimensions are in millimeters (inches)
2
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IR30CDR..L Series
Bulletin I0308J 11/01
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 11/01
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